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| INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor BUV10 DESCRIPTION *High Switching Speed *High Current Capability APPLICATIONS *Designed for high current,high speed,high power applications. Absolute maximum ratings(Ta=25) SYMBOL VCBO VCEX VCER VCEO VEBO IC ICM IB B PARAMETER Collector-Base Voltage Collector-Emitter Voltage VBE= -1.5V Collector-Emitter Voltage RBE= 100 Collector-Emitter Voltage Emitter-Base Voltage VALUE 160 160 UNIT Collector Current-Continuous Collector Current-Peak w w scs .i w 140 125 7 25 30 6 150 200 -65~200 .cn mi e V V V V V A A A W Base Current-Continuous Collector Power Dissipation @TC=25 Junction Temperature Storage Temperature Range PC Tj Tstg THERMAL CHARACTERISTICS SYMBOL Rth j-c PARAMETER Thermal Resistance,Junction to Case MAX 1.0 UNIT /W isc Websitewww.iscsemi.cn INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor ELECTRICAL CHARACTERISTICS TC=25 unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. BUV10 MAX UNIT VCEO(SUS) Collector-Emitter Sustaining Voltage IC= 0.2A; IB= 0; L= 25mH 125 V V(BR)EBO Emitter-Base Breakdown Voltage IE= 50mA; IC= 0 7 V VCE(sat)-1 Collector-Emitter Saturation Voltage IC= 10A; IB= 1A 1.0 V VCE(sat)-2 VBE(sat) ICEO Collector-Emitter Saturation Voltage IC= 20A ;IB= 2A IC= 10A; IB= 1A 2.0 V Base-Emitter Saturation Voltage 1.5 V Collector Cutoff Current ICEX Collector Cutoff Current IEBO Emitter Cutoff Current hFE-1 DC Current Gain hFE-2 fT DC Current Gain Current-Gain--Bandwidth Product w w. w .cn mi cse is VCE= 100V; IB= 0 VCE= 160V;VBE= -1.5V VCE= 160V;VBE= -1.5V;TC=125 VEB= 5V; IC= 0 IC= 10A ; VCE= 4V 20 IC= 20A ; VCE= 4V 10 IC= 1A; VCE= 15V 8 1.5 1.5 6.0 0.5 mA mA mA 60 MHz isc Websitewww.iscsemi.cn |
Price & Availability of BUV10
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